Biography
Dr. Mingsheng Long
Dr. Mingsheng Long
Shanghai Institute of Technology Physics, Chinese Academy of Sciences, China
Title: High performance room temperature mid-infrared photodetector based on air stable PdSe2
Abstract: 
The ability to detect light with a Mid-infrared MIR)spectra range at room temperature is desirable for applications of remote sensing, thermal image,biomedicine and optical radar. However, state-of-the-art MIR photodetectors are suffering many issues such as low photoresponsivity, air sensitivity and high dark current. Here, we report a highly sensitive, air stable and operable at room temperature MIR detector based on PdSe2 phototransistors and heterostructures. High photoresponsivity of ~40 AW-1 and specific detectivity of 8.0109 Jones were obtained at 10.6 μm in ambient air. Combined with van der Waals (vdW) heterojunctions, ultra-broadband photodetection from visible range to the second LWIR atmospheric transmission window (8-14 μm) was demonstrated. These results not only exemplify a new promising candidate for room temperature MIR photodetectors but also open an avenue to other MIR technologies, such as infrared remote sensing and free space telecommunication.
Biography: 
Mingsheng Long received his B. S. degree in Xiangtan University, Xiangtan, China, in 2006, and M. S. degree in South China Normal University Guangzhou, China, in 2010, and Ph. D. degree in Nanjing University, Nanjing, China, in 2017. He is currently a research assistant in Prof. Weida Hu’s group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. He has published more than 10 journal papers as first author in Science advances, Nano letters, Applied. Physics. Letters etc. His research interest focus on the synthesis of novel narrow bandgap layered materials and their infrared physical properties.