Prof. Weida Hu
Prof. Weida Hu
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, China
Title: Infrared photodetectors based on 2Dmaterials and nanowires
Infrared photodetectors based on traditional thin-film semiconductors such as InGaAs, InSb, and HgCdTe as well as novel type-II superlattice exhibit highly sensitive detection capability. However these devices always need to work at low temperature, resulting in an additional large and expensive cooling system. Recently,2D materials have attracted tremendous attention owing to their bandgap tunability and potential optoelectric applications. Nevertheless, as a photoconductive detector, the signal-to-noise ratio could be very low without the suppression of dark current. Meanwhile, the performance of 2D photodetectors is strongly affected by surface states resulting in the restricted electron-hole separation efficiency, and intrinsic ultrathin absorption thickness of 2D photodetectors suffers the low quantum efficiency. In this talk, we review the progress on infrared photodetectors based on 2D materialsand nanowires in my group. We fully exploit the detection ability of 2D materials and nanowires by introducing localized-field, including ferroelectric filed, vertical heterojunction field, p-n junction photovoltaic field and so forth. With a strong induced localized-field, high performance photodetectors based on Graphene, TMDs, Black phosphorus, Black arsenic-phosphorus, InAs nanowires etc. in infrared wave band may lead to a disruptive revolution in prospective low dimensional optoelectronic devices. Finally, we deliver an outlook, discuss the challenges and future directions, and give general advice for designing and realizing novel high-performance infrared photodetectors to provide a guideline for the future development of this fast-developing field.
Weida Hu received his B. S. and M. S. degree in Material of Science from Wuhan University of Technology, Wuhan, China, in 2001 and 2004, respectively, and Ph.D. degree (with honors) in Microelectronics and Solid-State electronics from the Shanghai Institute of Technology Physics, Chinese Academy of Sciences, in 2007. He is currently a full professor on fabrication and characterization of infrared photodetectors in Shanghai Institute of Technology Physics, Chinese Academy of Sciences. He has authored or coauthored more than 100 technical journal papers and conference presentations. He gets National Science Foundation for Distinguished Young Scholars in 2017, National Science Foundation for Excellent Young Scholars in 2013 and Ten Thousand Talents Program for Young Talents in 2015. He is also serving as the Associate Editor of Infrared Physics & Technology, the Executive Editor of Optical and Quantum Electronics, the program committee of SPIE DCS Defense and Security - Infrared Technology and Applications, and the program committee of the International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).